View CHA2192-99F00_547957.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CHA2192
24-26.5GHz Low Noise Amplifier
GaAs Monolithic Microwave IC Description
The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Gain & NF ( dB )
Main Features
1.8 dB noise figure 15 dB 1dB gain 10 dBm output power Very good broadband input matching DC power consumption, 40mA @ 3.5V Chip size : 1.67 x 0.97 x 0.10 mm
20 18 16 14 12 10 8 6 4 2 0 16 18 20 22 24 26
Gain
NF
28 30 32 34 Frequency ( GHz )
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25C Symbol
Fop G NF P1dB
Parameter
Operating frequency range Small signal gain Noise figure Output power at 1dB gain compression
Min
24 14
Typ
15 1.8
Max
26.5
Unit
GHz dB
2.0
dB dBm
8
10
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA21928155
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2192
Tamb = +25C, Vd = 3.5V Symbol
Fop G G Is NF P1dB VSWRin
24-26.5GHz Low Noise Amplifier
Electrical Characteristics for Broadband Operation
Parameter
Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Noise figure Pulsed output power at 1dB compression (1) Input VSWR (1) 8
Min
24 14
Typ
Max
26.5
Unit
GHz dB dB dB
15 1.0 30 1.8 10 2.0:1 2.0:1 40 60 2.0
dB dBm
VSWRout Output VSWR (1) Id Bias current
mA
(1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25C (1) Symbol
Vd Id Vg Pin Ta Tstg Drain bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range
Parameter
Values
4.0 150 -2.0 to +0.4 +15 -40 to +85 -55 to +155
Unit
V mA V dBm C C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHA21928155
2/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-26.5GHz Low Noise Amplifier
Bias Conditions : Vd = +3.5V, Id = 40 mA Freq. GHz
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
CHA2192
Typical On Wafer Scattering Parameters and Noise Figure
S11 dB
-0,11 -0,14 -0,15 -0,18 -0,22 -0,26 -0,33 -0,42 -0,62 -0,86 -0,79 -0,72 -0,92 -1,52 -2,68 -4,24 -5,70 -6,70 -7,06 -7,30 -7,86 -8,82 -10,02 -11,19 -11,90 -11,60 -10,37 -8,73 -7,20 -6,30 -5,14 -4,39 -3,68 -3,28 -2,83 -2,55 -2,20 -1,94 -1,89 -1,54
S11 /
-15,4 -30,7 -45,8 -61,2 -76,4 -92,1 -107,7 -124,1 -140,9 -157,3 -175,1 162,9 136,4 104,7 67,2 24,8 -19,6 -59,7 -92,2 -117,7 -138,8 -155,5 -165,5 -168,9 -168,4 -163,0 -161,7 -165,0 -172,1 179,4 169,7 159,2 148,6 138,2 127,8 118,2 108,3 98,5 89,3 80,2
S12 dB
-73,89 -74,53 -70,24 -81,19 -73,30 -59,10 -66,55 -62,12 -60,15 -54,22 -49,02 -45,15 -41,76 -38,85 -36,59 -34,81 -33,78 -33,16 -32,74 -32,23 -31,82 -31,31 -30,23 -29,72 -29,12 -28,62 -28,30 -28,02 -27,90 -27,92 -27,87 -27,95 -28,04 -28,28 -28,28 -28,51 -29,15 -29,22 -29,80 -30,02
S12 /
58,1 35,2 3,8 41,8 31,0 -38,8 -77,6 -115,8 172,5 112,5 44,8 10,1 -22,0 -49,6 -75,1 -99,7 -121,4 -140,0 -154,3 -167,8 -179,5 172,5 161,5 150,2 139,6 128,6 117,8 106,9 96,6 87,0 78,6 67,9 59,8 51,7 42,5 34,7 26,3 21,9 13,5 10,8
S21 dB
-30,22 -32,18 -36,24 -48,79 -36,60 -25,44 -17,39 -7,82 1,09 7,90 11,29 13,12 14,80 16,38 17,54 18,09 18,21 17,92 17,56 17,23 16,98 16,66 16,42 16,20 15,88 15,51 15,14 14,66 14,11 13,48 12,82 12,10 11,34 10,44 9,56 8,63 7,70 6,75 5,76 4,94
S21 /
153,9 112,1 88,2 92,5 -160,2 11,8 -49,1 -73,1 -105,1 -151,2 162,0 126,0 96,0 67,0 37,5 8,7 -17,0 -40,7 -60,8 -78,9 -96,5 -113,0 -128,7 -144,6 -160,2 -175,2 170,0 155,1 140,7 127,2 113,8 100,8 88,0 76,1 64,1 53,4 43,1 33,5 24,0 14,9
S22 dB
-0,46 -1,19 -2,30 -3,30 -4,78 -5,35 -5,98 -7,15 -9,06 -11,46 -11,65 -11,54 -11,99 -12,57 -12,53 -12,65 -11,76 -12,19 -12,76 -13,95 -15,34 -16,56 -16,82 -16,08 -16,06 -14,23 -13,06 -11,23 -10,29 -9,22 -8,51 -7,82 -7,48 -6,85 -6,58 -6,37 -6,16 -6,17 -5,73 -6,01
S22 /
-24,8 -48,2 -68,3 -86,2 -104,3 -103,2 -124,0 -138,5 -150,3 -151,2 -145,7 -150,2 -154,2 -155,9 -156,1 -158,0 -161,0 -167,8 -174,9 -174,2 -178,3 -162,6 -160,7 -144,0 -138,8 -130,9 -130,4 -127,6 -131,8 -134,4 -140,7 -140,5 -148,2 -148,1 -156,0 -155,3 -161,7 -161,3 -167,2 -167,7
NF
2,45 2,41 2,36 2,08 1,79 1,72 1,66 1,64 1,63 1,56 1,49 1,60 1,58 1,65 1,44 1,80 1,56 1,67 1,73 1,92 2,17
Ref. : DSCHA21928155
3/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2192
Typical on Wafer Measurements
Bias conditions: Vd=3.5V, Id= 40mA
24-26.5GHz Low Noise Amplifier
Gain, NF, RLoss ( dB )
20,00 15,00 10,00 5,00 0,00 -5,00 -10,00 -15,00 -20,00 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Frequency ( GHz ) dBS22 dBS11 NF Gain
Typical Bias Tuning for Low Noise Operation
For low noise operation, a separate access to the gate voltages of the input stage ( Vgs1 ) and of the output stage ( Vgs2 ) is provided. Nominal bias for low noise operation is obtained for a typical current of 20 mA for the output stage and 10 mA for the input stage ( 30 mA for the amplifier ). The first step to bias the amplifier is to tune the Vgs1 = -1V, and Vgs2 to drive 20 mA for the full amplifier. Then Vgs1 is reduced to obtain 30 mA of current through the amplifier. A fine tuning of the noise figure may be obtained by modifying the Vgs1 bias voltage, but keeping the previous value for Vgs2.
Ref. : DSCHA21928155
4/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-26.5GHz Low Noise Amplifier
Chip Assembly and Mechanical Data
CHA2192
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers )
Ref. : DSCHA21928155
5/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2192
24-26.5GHz Low Noise Amplifier
Ordering Information
Chip form : CHA2192-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA21928155
6/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

▲Up To Search▲

Price & Availability of CHA2192-99F00

	To Download CHA2192-99F00 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .